Methods of fabricating semiconductor devices and structures thereof
AssigneesInfineon Technologies AG, Samsung Electronics Co., Ltd.
InventorsSun-Oo Kim, Yoon-Hae Kim
Life of this patent
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Abstract
Methods of fabricating semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming a first insulating material over the semiconductor wafer, and forming a plurality of first features and a plurality of second features in the first insulating material. The plurality of first features is removed, leaving an unfilled pattern in the first insulating material. The unfilled pattern in the first insulating material is filled with a second insulating material.
Claims25
A method of manufacturing a semiconductor device, the method comprising:
- providing a semiconductor wafer;
- forming a first insulating material over the semiconductor wafer;
- forming a plurality of first features and a plurality of second features in the first insulating material;
- removing the plurality of first features, leaving an unfilled pattern in the first insulating material;
- and
- filling the unfilled pattern in the first insulating material with a second insulating material.
A method of manufacturing a semiconductor device, the method comprising:
- providing a workpiece;
- forming a first insulating material over the workpiece;
- patterning the first insulating material with a first pattern for a plurality of first features and a second pattern for a plurality of second features proximate the first pattern for the plurality of first features;
- filling the first pattern and the second pattern in the first insulating material with a conductive material;
- removing the conductive material from within the first pattern for the plurality of first features, leaving the conductive material in the second pattern for the plurality of second features;
- and
- filling the first pattern for the plurality of first features with a second insulating material.
A method of manufacturing a semiconductor device, the method comprising:
- providing a workpiece, the workpiece comprising a first region and a second region proximate the first region;
- forming a first insulating material over the workpiece, the first insulating material having a top surface;
- patterning the first insulating material with a first pattern for a plurality of first features in the first region and a second pattern for a plurality of second features in the second region;
- filling the first pattern and the second pattern in the first insulating material with a conductive material, forming a plurality of first features in the first region and a plurality of second features in the second region within the first insulating material;
- removing excess conductive material from over the top surface of the first insulating material using a chemical-mechanical polish (CMP) process;
- removing the plurality of first features from the first region;
- and
- filling the first pattern for the plurality of first features in the first region with a second insulating material.
A semiconductor device, comprising:
- a workpiece, the workpiece comprising a first region and a second region proximate the first region;
- a first insulating material disposed over the workpiece;
- a plurality of dummy features disposed in the first insulating material in the first region, the plurality of dummy features comprising a second insulating material;
- and
- a plurality of conductive features disposed in the first insulating material in the second region.
Dependencies are inferred from the claim text.