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AssigneeAixtron SE
InventorsMarcus Schumacher, Peter Baumann, Johannes Lindner, Timothy McEntee
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The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material (3) or a starting material (3) dissolved in a liquid into a tempered evaporation chamber (4) with the aid of one respective injector unit (5) while said vapor is fed to the processing chamber by means of a carrier gas (7). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material (3) through the associated injector unit (5), are individually adjusted or varied.
A process for depositing at least one semiconductor layer on at least one substrate in a process chamber, the semiconductor layer comprising a plurality of components, and the components being vaporized by means of discontinuous injection of a liquid starting material or a starting material dissolved in a liquid into a temperature-controlled vaporization chamber by means of, in each case, an associated injector unit, and the vapor being fed to the process chamber by means of a carrier gas, characterized in that mass flow parameters which determine a time profile of a mass flow of a first starting material, which contains silicon, and a second starting material, which contains germanium, through the associated injector unit, said parameters including a preliminary injection pressure, an injection frequency and a-pulse/pause ratio, as well as a phase relationship of pulses/pauses with respect to pulses/pauses of other injector unit(s), are individually set or varied.
A process for the discontinuous injection of liquid, chemically reactive starting materials which contain silicon and/or germanium, comprising using a multichannel injector unit to inject the starting materials such that, an injection frequency, a preliminary injection pressure, a pulse/pause ratio and a phase relationship with respect to other injector units is set in terms of a mass flow direction at each injector unit, and the injected starting substances, together with at least one inert carrier gas, are introduced into a temperature-controlled volume in which the starting materials are vaporized and subsequently deposited on a group IV substrate to form at least one silicon, germanium and/or SiGe layer.
Dependencies are inferred from the claim text.