Carbon nanotube transistor process with transferred carbon nanotubes

A method of making a transistor device comprising:

• providing a template comprising a plurality of pores, each pore having a pore diameter;
• transferring carbon nanotubes to the pores;
• forming a first electrode region to electrically couple to first ends of the carbon nanotubes;
• forming a second electrode region to electrically couple to second ends of the carbon nanotubes;
• forming a first trench in the template;
• forming a first gate region in the first trench, wherein the carbon nanotubes transferred comprise semiconducting and metallic carbon nanotubes;
• and
• applying a voltage to the first gate region that results in a current flow through the carbon nanotubes, whereby the metallic carbon nanotubes are burned off in greater numbers than the semiconducting carbon nanotubes.

A method of making a transistor device comprising:

• providing a template having a top surface and a bottom surface, opposite of the top surface;
• forming vertical openings in the substrate, wherein the openings extends from the top surface of the template, through the template, to the bottom surface of the template;
• providing carbon nanotubes in the openings, wherein the carbon nanotubes comprise a mixture of semiconducting and metallic carbon nanotubes that extend from the top surface to the bottom surface of the template;
• forming a first electrode region on the top surface of the template to electrically couple to first ends of the carbon nanotubes;
• forming a second electrode region on the bottom surface of the template to electrically couple to second ends of the carbon nanotubes;
• forming a first gate region in the template, wherein the first gate region has a first surface extending parallel to a portion of a first carbon nanotube between first and second ends of the first carbon nanotube;
• forming a second gate region in the template, wherein the second gate region has a second surface extending parallel to a portion of a second carbon nanotube between first and second ends of the second carbon nanotube, and the first carbon nanotube is positioned between the second carbon nanotube and the first gate region;
• and
• applying a voltage to the first and second gate regions that results in a current flow through the carbon nanotubes between the first and second gate regions, whereby the metallic carbon nanotubes between the first and second gate regions are burned off in greater numbers than the semiconducting carbon nanotubes between the first and second gate regions.