Semiconductor device and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorsNobutoshi Aoki, Hiroshi Akahori
Life of this patent
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Abstract
A semiconductor device according to an embodiment of the present invention includes: a semiconductor substrate; an isolation structure formed in a trench, formed in the semiconductor substrate, through a semiconductor oxide film; a floating gate formed on the semiconductor substrate between the isolation structures through an insulating film; a gate oxidation protection film formed on a side surface, on the isolation structure side, of the floating gate so that each of a part of a side surface and a bottom surface of the gate oxidation protection film contacts the insulating film; and a control gate formed on the floating gate through an inter-gate insulating film.
Claims15
A method of fabricating a semiconductor device, comprising:
- forming an insulating film on a semiconductor substrate;
- forming a semiconductor on the insulating film;
- patterning the semiconductor, thereby forming a first trench to a depth at which the insulating film is exposed;
- forming an oxidation protection film within the first trench so as to cover a side surface of the semiconductor exposed due to the formation of the first trench;
- removing the insulating film located in a bottom portion of the first trench having the oxidation protection film formed therein, and a portion of the semiconductor substrate located right under the first trench, thereby forming a second trench having a predetermined depth;
- forming an oxide film in an inner wall of the second trench formed in the semiconductor substrate by performing oxidation processing;
- and
- filling an insulating material in the second trench having the oxide film formed therein, thereby forming an isolation structure.
Dependencies are inferred from the claim text.