US 7,732,268 B2 · Manufacturing method of display device

Abstract

A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a substrate, by forming a plurality of pixels having TFT devices using an amorphous silicon in the display region of the substrate, and forming a plurality of driving circuits having semiconductor devices using a polycrystal silicon at the outside of the display region, the method including irradiation of a first continuous oscillation laser only to the amorphous silicon in the region for forming the driving circuit and the peripheral region thereof to conduct dehydrogenation and then irradiation of a second continuous oscillation region only to the dehydrogenated region to polycrystallize the amorphous silicon, wherein the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.

Claims14

Dependent claims

A method of manufacturing a display device, the method comprising;

a first step of depositing a hydrogenated amorphous silicon on a substrate and
a second step of dehydrogenating a predetermined region of the hydrogenated amorphous silicon and then melting and crystallizing the amorphous silicon in a dehydrogenated region into polycrystal silicon,
a step of forming a plurality of pixels having TFT devices using an amorphous silicon in a display region of the substrate, and forming a driving circuit having a plurality of semiconductor devices using the polycrystal silicon to the outside of the display region, wherein
in the second step, a first continuous oscillation laser is irradiated only to the region of forming the driving circuit and the peripheral region thereof at the outside of the display region of the substrate to conduct dehydrogenation, and a second continuous oscillation laser is irradiated only to the dehydrogenated region to transform the amorphous silicon into the polycrystal silicon;
and
the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.

3 more elements

A method of manufacturing a liquid crystal display device having a liquid crystal display panel in which liquid crystals are put between a substrate and an opposed substrate, the method including;

a first step of depositing a hydrogenated amorphous silicon film on the substrate, and
a second step of dehydrogenating a predetermined region of the hydrogenated amorphous silicon film and then melting and crystallizing the amorphous silicon in the dehydrogenated region into a polycrystal silicon,
a step of forming a plurality of pixels having TFT devices using the amorphous silicon in a display region of the substrate and forming a driving circuit having a plurality of semiconductor devices using the polycrystal silicon to the outside of the display region, wherein
in the second step, a first continuous oscillation laser is irradiated only to the region for forming the driving circuit and the peripheral region thereof at the outside of the display region of the substrate to conduct dehydrogenation, and a second continuous oscillation laser is irradiated only to the dehydrogenated region to form the amorphous silicon into the polycrystal silicon, and
the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.

2 more elements

Dependencies are inferred from the claim text.

Manufacturing method of display device

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Manufacturing method of display device

Life of this patent

Abstract

Claims14