Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Koji Dairiki
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Abstract
The present invention is to provide a semiconductor device that achieves high mechanical strength without reducing the circuit scale and that can prevent the data from being forged and altered illegally while suppressing the cost. The present invention discloses a semiconductor device typified by an ID chip that is formed from a semiconductor thin film including a first region with high crystallinity and a second region with the crystallinity inferior to the first region. Specifically, a TFT (thin film transistor) of a circuit requiring high-speed operation is formed by using the first region and a memory element for an identifying ROM is formed by using the second region.
Claims26
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a semiconductor film having an amorphous structure over a first substrate;
- irradiating the semiconductor film with a laser beam with scanning in a direction, thereby forming a first region and a second region in the semiconductor film;
- forming an integrated circuit comprising a first thin film transistor using the first region in the semiconductor film and a memory cell array comprising a second thin film transistor using the second region in the semiconductor film;
- and
- forming an antenna,
- wherein the first region is superior to the second region in crystallinity,
- wherein the step of forming the integrated circuit and the memory cell array comprises a process of forming a gate electrode, and
- wherein the step of forming the antenna is performed at the same time as the process of forming the gate electrode.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a semiconductor film having an amorphous structure over a first substrate;
- irradiating the semiconductor film with a laser beam with scanning in a direction, thereby forming a first region and a second region in the semiconductor film;
- forming an integrated circuit comprising a first thin film transistor using the first region in the semiconductor film and a memory cell array comprising a second thin film transistor using the second region in the semiconductor film;
- and
- forming an antenna,
- wherein the first region is superior to the second region in crystallinity,
- wherein the step of forming the integrated circuit and the memory cell array comprises a process of forming one of a source electrode and a drain electrode, and
- wherein the step of forming the antenna is performed at the same time as the process of forming the one of the source electrode and the drain electrode.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a semiconductor film having an amorphous structure over a first substrate;
- irradiating the semiconductor film with a laser beam with scanning in a direction, thereby forming a first region and a second region in the semiconductor film;
- forming an integrated circuit comprising a first thin film transistor using the first region in the semiconductor film and a memory cell array comprising a second thin film transistor using the second region in the semiconductor film;
- forming an antenna over a second substrate;
- and
- attaching the first substrate to the second substrate so as to sandwich the integrated circuit, the memory cell array and the antenna between the first substrate and the second substrate,
- wherein the first region is superior to the second region in crystallinity.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a semiconductor film having an amorphous structure over a first substrate;
- irradiating the semiconductor film with a laser beam with scanning in a direction, thereby forming a first region and a second region in the semiconductor film;
- forming an integrated circuit comprising a first thin film transistor using the first region in the semiconductor film and a memory cell array comprising a second thin film transistor using the second region in the semiconductor film;
- forming a base film over the first substrate before forming the semiconductor film;
- forming a stripping layer over the base film before forming the semiconductor film;
- stripping the integrated circuit and the memory cell array from the first substrate;
- and
- attaching the stripped integrated circuit and the memory cell array to a second substrate,
- wherein the first region is superior to the second region in crystallinity.
Dependencies are inferred from the claim text.