Fabrication method of non-volatile memory

A non-volatile memory fabrication method, comprising:

• forming a stacked structure on a substrate, wherein the stacked structure comprises a gate dielectric layer at the bottom and a control gate above it;
• forming a first dielectric layer on the top of the control gate wherein the first dielectric layer covers and contacts the entire top of the control gate and has stacked layer of bottom oxide, nitride, and top oxide layers;
• forming a second dielectric layer and a third dielectric layer respectively on sidewalls of the stacked structure and over an exposed substrate;
• and
• forming a pair of conductive charge storage layers over the substrate respectively covering a portion of the top and the sidewalls of the stacked structure, wherein a first gap exists between each of the charge storage layers, wherein the conductive charge storage layers are controlled by the control gate of the stacked structure.