Method for manufacturing solid-state image sensor
AssigneeRenesas Technology Corp.
InventorsMasatoshi Kimura, Hiroki Honda
Life of this patent
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Abstract
A method using a divided exposure technology is provided for restraining deterioration in the performance of a solid-state image sensor. A photoresist is formed over a semiconductor substrate and subjected to divided exposure. A dividing line for divided exposure is located at least over a region of a semiconductor substrate in which an active region in which a pixel is to be formed is defined. The photoresist is then developed and patterned. By utilizing the patterned photoresist, an element isolation structure for defining the active region in the semiconductor substrate is formed in the semiconductor substrate.
Claims12
A method for manufacturing a solid-state image sensor, comprising the steps of:
- (a) providing a substrate,
- (b) forming a first photoresist over the substrate,
- (c) exposing the first photoresist,
- (d) after the step (c), developing the first photoresist and patterning the first photoresist, and
- (e) forming, in the substrate, an element isolation structure for defining an active region having a pixel of the solid-state image sensor formed therein in the substrate, by using the first photoresist patterned in the step (c),
- the step (c) further comprising the steps of:
- (c-1) exposing a first region of the first photoresist;
- and
- (c-2) exposing a second region of the first photoresist which region is adjacent to the first region,
- wherein a dividing line between the first region and the second region in the step (c) is located at least over a region of the substrate in which the active region is defined.
Dependencies are inferred from the claim text.