Quantum dot based optoelectronic device and method of making same
AssigneeThe Regents of the University of California
InventorYa-Hong Xie
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Abstract
A method of forming an optically active region on a silicon substrate includes the steps of epitaxially growing a silicon buffer layer on the silicon substrate and epitaxially growing a SiGe cladding layer having a plurality of arrays of quantum dots disposed therein, the quantum dots being formed from a compound semiconductor material having a lattice mismatch with the silicon buffer layer. The optically active region may be incorporated into devices such as light emitting diodes, laser diodes, and photodetectors.
Claims11
A method of forming an optically active device comprising:
- providing a silicon substrate having a first surface and a second surface;
- epitaxially growing a silicon buffer layer on the silicon substrate on a first surface;
- epitaxially growing a SiGe cladding layer having a plurality of arrays of quantum dots disposed therein, the quantum dots being formed from a polar compound semiconductor material having a lattice mismatch with the silicon buffer layer;
- defining an optically active region in the cladding layer having the plurality of arrays of quantum dots disposed therein;
- forming oxide isolation regions adjacent to the optically active region;
- forming a first quarter wave stack above the optically active region;
- forming a first metal contact configured for electrical contact with the optically active region;
- forming a recess in the second surface of the silicon substrate;
- forming a second quarter wave stack in the recess below the optically active region;
- and
- forming a second metal contact on a second surface of the silicon substrate.
A method of forming an optoelectronic device comprising:
- providing a silicon substrate having a first surface and a second surface and a silicon buffer layer disposed on a first surface;
- epitaxially depositing an optically active region over the buffer layer, the optically active region comprising upper and lower SiGe cladding layers and a plurality of stacked quantum dot arrays disposed there between, wherein the quantum dots are formed from a compound semiconductor material selected from the group consisting of InGaAs, InGaP, InGaSb, CdTe, CdSe, and PbTe;
- forming isolation regions adjacent to the optically active region;
- forming a silicon capping layer over the optically active region;
- forming a first quarter wave stack above the optically active region;
- forming a first metal contact on the silicon capping layer;
- forming a recess in the second surface of the silicon substrate;
- forming a second quarter wave stack in the recess below the optically active region;
- and
- forming a second metal contact on a second surface of the silicon substrate.
Dependencies are inferred from the claim text.