Method of forming a dielectric layer on a semiconductor light emitting device

A method comprising:

• forming a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
• removing a portion of the light emitting layer and the p-type region to expose a portion of the n-type region;
• forming a first metal contact on an exposed portion of the n-type region and a second metal contact on a remaining portion of the p-type region, wherein the first and second metal contacts are formed on a same side of the semiconductor structure;
• and
• disposing a dielectric material between the first and second metal contacts, wherein the dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact;
• and
• forming a planar surface, the planar surface including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material, by removing a portion of at least one of the first metal contact, the second metal contact, and the dielectric material.