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US 7,732,123 B2Granted
Immersion photolithography with megasonic rinse
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChing-Yu Chang
Life of this patent
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Abstract
A method comprises forming a photoresist on a substrate, rinsing the photoresist using a rinse liquid agitated with at least one megasonic source, exposing the photoresist to radiation while immersed in a liquid, and developing the photoresist.
Claims18
A method comprising:
- forming a photoresist on a substrate;
- rinsing the photoresist using a rinse liquid agitated with at least one megasonic source;
- removing the rinse liquid from the photoresist;
- immersing the photoresist in a second liquid, wherein the second liquid is an immersion exposure liquid, wherein the immersing is performed after the removing the rinse liquid, and wherein the rinsing the photoresist and the immersing the photoresist are performed in a same chamber;
- and
- exposing the photoresist to radiation while immersed in the immersion exposure liquid, wherein exposing the photoresist occurs subsequent to rinsing the photoresist.
3 more elements
A method comprising:
- forming a photoresist on a semiconductor wafer;
- soft baking the photoresist;
- rinsing the photoresist using a liquid comprising surfactant water, wherein the surfactant water is megasonically-agitated during the rinsing of the photoresist;
- removing the surfactant water from the wafer following the rinsing of the photoresist;
- and
- exposing the rinsed photoresist to radiation while immersed in an immersion exposure liquid, wherein the rinsing the photoresist is performed prior to the exposing the photoresist and wherein the exposing provides a patterned photoresist used to form a semiconductor device feature, and wherein the rinsing the photoresist and the exposing the rinsed photoresist occur in a same chamber.
3 more elements
Dependencies are inferred from the claim text.