Methods for etching devices used in lithography
AssigneeIntel Corporation
InventorsEdita Tejnil, Yan Borodovsky
Life of this patent
Estimating the term…
Abstract
Methods for etching devices used for lithography. In one aspect, a method includes etching, in a single etch, a first region and a second region on a substrate. The first region is to attenuate an intensity of the zero diffraction order of a radiation for patterning of a microelectronic device to a first extent. The second region is to attenuate the intensity of the zero diffraction order of the radiation to a second extent. The second extent being sufficiently different from the first extent to improve a quality of the patterned microelectronic device.
Claims18
A method for etching a device used in lithography, the method comprising:
- etching to a depth from a level of a surface to form a first portion of the device, the first portion including a first collection of subwavelength features having a pitch dimension smaller than one wavelength of a radiation to pattern microelectronic devices;
- and
- etching to a depth from the level of the surface to form a second portion of the device, the second portion including a second collection of subwavelength features having a pitch dimension smaller than one wavelength of the radiation, the second portion transmitting the zero diffraction order of the radiation with at least one of a different transmissivity and a different phase than the zero diffraction order of the radiation transmitted by the first portion.
A method for etching a device used in lithography, the method comprising:
- etching, in a single etch, to form a first phase shifter and a second phase shifter at a substrate,
- the first phase shifter to shift, to a first extent relative to other radiation transmitted through or reflected by a reference region of the device, a phase of the zero diffraction order of a radiation for patterning of microelectronic devices, and
- the second phase shifter to shift, to a second extent relative to other radiation transmitted through or reflected by a reference region of the device, the phase of the zero diffraction order of the radiation.
A method for etching a device used in lithography, the method comprising:
- etching, in a single etch, to form a first region and a second region on a substrate,
- the first region to attenuate, to a first extent relative to other radiation transmitted through or reflected by a reference region of the device, an intensity of the zero diffraction order of a radiation for patterning of a microelectronic device, and
- the second region to attenuate, to a second extent relative to other radiation transmitted through or reflected by the reference region of the device, the intensity of the zero diffraction order of the radiation, the second extent being sufficiently different from the first extent to improve a quality of the patterned microelectronic device.
Dependencies are inferred from the claim text.