Method for preparing ZnO nanocrystals directly on silicon substrate
AssigneeKorea Institute of Science and Technology
InventorsYoung Hwan Kim, Woon Jo Cho, Seong Kim, II, Chun Keun Kim, Yong Tae Kim
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Abstract
A method for preparing a ZnO nanocrystal directly on a silicon substrate includes the steps of: (S1) forming a Zn—Si—O composite thin film on the silicon substrate; and (S2) thermally treating the obtained thin film. Particularly, ZnO nanocrystals are formed in an amorphous Zn—Si—O composite thin film by controlling the composition of the Zn—Si—O composite thin film and heating temperature thereof. With the present invention method for preparing a ZnO nanocrystal directly on a silicon substrate, more possibilities are opened up for the applications of ZnO nanocrystals to an optoelectronic device in use of a silicon substrate.
Claims6
An optoelectronic device, comprising:
- a silicon substrate;
- a Zn—Si—O composite film formed on the silicon substrate;
- and
- a ZnO nanocrystal formed in the composite thin film,
- wherein a Zn/Si ratio in the Zn—Si—O composite thin film ranges from 1.0 to 2.0.
Dependencies are inferred from the claim text.