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US 7,731,933 B2Granted
Insulating target material, method of manufacturing insulating target material, insulating complex oxide film, and device
AssigneeSeiko Epson Corporation
InventorsTakeshi Kijima, Takamitsu Higuchi
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Abstract
An insulating target material for obtaining an insulating complex oxide film represented by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta.
Claims7
A method of manufacturing an insulating target material comprising:
- preparing a first precursor composition including a raw material solution including Pb, Zr, Ti and Nb, a polycarboxylic acid or a polycarboxylic acid ester, and an organic solvent;
- forming a first powder of a complex oxide including Pb, Zr, Ti and Nb by spray drying the first precursor composition while simultaneously heating the first precursor composition;
- and
- forming a second powder by subjecting the first powder and a second precursor composition that is obtained by mixing a basic substance with the first precursor composition to hydrothermal synthesis to allow a complex oxide including Pb, Zr, Ti and Nb to be grown around particles of the first powder,
- wherein the second powder includes Nb in an amount of 10 to 30 mol %.
2 more elements
Dependencies are inferred from the claim text.