Liquid drop discharge head and manufacture method thereof, micro device, ink-jet head, ink cartridge, and ink-jet printing device
AssigneeRicoh Company, Ltd.
InventorsKenichiroh Hashimoto, Tadashi Mimura
Life of this patent
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Abstract
A liquid drop discharge head includes a chip 21 that is formed by separation of a silicon wafer 20. The silicon wafer 20 has a first direction and a second direction which are mutually intersected. The chip 21 is separated from the silicon wafer 20 by etching the wafer along a separation line 22 parallel to the first direction of the wafer and by dicing the wafer 20 along a separation line 23 parallel to the second direction of the wafer.
Claims3
A manufacture method of a liquid drop discharge head including a head component chip formed by separation of a silicon wafer, the silicon wafer having a first direction and a second direction chat are mutually intersected, the method comprising the steps of:
- forming a slit at a T-shaped intersection between a lateral separation line and a lengthwise separation line of the silicon wafer, by utilizing alkali etching liquid, partially on a first separation line parallel to the first direction of the silicon wafer in order to partially separate the chip from the silicon wafer along the first separation line;
- chopper dicing a part of the silicon wafer which does not have a slit, by utilizing a dicing instrument, along the first separation line parallel to the first direction of the silicon wafer to form the first separation line along the first direction;
- and
- dicing the silicon wafer, by utilizing the dicing instrument, along a second separation line parallel to the second direction of the silicon wafer to completely separate the chip from the silicon wafer along the first and second separation lines,
- wherein the silicon wafer is of (110) crystalline orientation, and a plurality of chips, configured in a rectangular formation, are arranged in the silicon wafer, and first separation lines for the plurality of chips to be separated from the silicon wafer by the etching step are parallel to <112> orientation of the silicon wafer, and
- wherein perpendicular (111) to a wafer side is formed by pattern of the <112> orientations.
Dependencies are inferred from the claim text.