Condition assessment method for a structure including a semiconductor material
AssigneeAttofemto, Inc.
InventorPaul L. Pfaff
Life of this patent
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Abstract
An improved condition testing system and method includes a structure including a semiconductor material with a target portion and a second portion. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a grating shaped and located to produce a first optical interference pattern when the target portion and the grating are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use a second grating spaced apart from the first grating.
Claims27
A method comprising:
- providing a structure to include a semiconductor material;
- providing a target portion and a second portion of the structure;
- initiating a first feature to occur with the target portion;
- providing a hologram or holographic optical element grating pattern;
- and
- exposing the hologram or holographic optical element grating pattern and the target portion having the first feature with non-invasive illumination to produce a first optical interference pattern.
A method comprising:
- providing a structure to include a semiconductor material, the structure having a thickness;
- providing a target portion and a second portion of the structure;
- initiating a first feature to occur with the target portion;
- providing a first hologram or holographic optical element grating with the structure;
- providing a second hologram or holographic optical element grating with the structure spaced apart from the first hologram or holographic optical element through at least a portion of the thickness of the structure;
- and
- exposing the first hologram or holographic optical element, the second hologram or holographic optical element grating, and the target portion having the first feature with non-invasive illumination to produce a first optical interference pattern.
A method comprising:
- providing a structure to include a semiconductor material, the structure having a thickness;
- providing a target portion and a second portion of the structure;
- initiating a first feature to occur with the target portion;
- providing a first hologram or holographic optical element grating with the structure;
- providing a second hologram or holographic optical element grating apart from the structure;
- and
- exposing the first hologram or holographic optical element grating, the second hologram or holographic optical element grating, and the target portion having the first feature with non-invasive illumination.
Dependencies are inferred from the claim text.