Power semiconductor component stack using lead technology with surface-mountable external contacts and a method for producing the same

A power semiconductor component stack using lead technology with surface-mountable external contacts, the power semiconductor component stack comprising:

• at least upper and lower MOSFET power semiconductor components arranged one above another in series or in parallel, with an intermediate plane between the upper and lower MOSFET power semiconductor components,
• the upper MOSFET power semiconductor component including:
• a top side comprising at least one source external contact area and a gate external contact area;
• and an underside comprising a drain external contact area, a source external contact area and a gate external contact area, the gate external contact area on the underside being electrically connected to the gate external contact area on the top side;
• and
• the lower MOSFET power semiconductor component including:
• a top side comprising at least one source external contact area and a gate external contact area:
• and an underside comprising a drain external contact area, a source external contact area and a gate external contact area, the gate external contact area on the underside of the lower MOSFET power semiconductor component being electrically connected to the gate external contact area on the top side of the lower MOSFET power semiconductor component,
• wherein the gate external contact area on the underside of the upper MOSFET power semiconductor component is electrically connected in the intermediate plane to the gate external contact area on the top side of the lower MOSFET power semiconductor component.