Method of aging field emission devices
AssigneeSamsung Electronics Co., Ltd.
InventorsChan-wook Baik, Sun-il Kim, Deuk-seok Chung, Byong-gwon Song, Min-jong Bae
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Abstract
A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method including: supplying a voltage to the cathode; supplying a voltage to the gate; and then supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being permanently damaged due to an overcurrent.
Claims12
A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method comprising:
- supplying a ground voltage to the cathode;
- supplying a positive (+) voltage to the gate electrode;
- supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being damaged due to an overcurrent;
- and increasing the voltage supplied to the gate electrode at a rising rate of 0 to 60 V/min, wherein a potential difference between the gate electrode and the cathode ranges from 0 to 200 V.
A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method comprising:
- supplying a negative (−) voltage to the cathode;
- supplying a ground voltage to the gate electrode;
- supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being damaged due to an overcurrent, and reducing the voltage supplied to the cathode at a falling rate of 0 to −60 V/min, wherein a potential difference between the gate electrode and the cathode ranges from 0 to 200 V.
Dependencies are inferred from the claim text.