Bonding apparatus and bonding method

A bonding apparatus that bonds an electrode of a semiconductor die with an electrode of a substrate, the apparatus comprising:

• a bump formation mechanism that forms a bump on the electrode by injecting microdroplets of a metal nano paste onto the electrode;
• a primary bonding mechanism that carries out primary bonding to the electrodes in a non-conductive state by pressing bumps formed by injecting microdroplets of a metal nano paste in which metal nanoparticles surface-coated by a dispersant are contained in a binder in a paste form on the electrodes against each other, and by heating each bump up to a predetermined temperature that is higher than a room temperature and lower than the binder removal temperature of the metal nano paste;
• and
• a secondary bonding mechanism that includes a pressurizing unit that pressurizes the primary bonded bump in a bonding direction, and that carries out secondary bonding so that the electrodes become conductive by heating the bump up to a temperature higher than a binder removal temperature of the metal nano paste and a dispersant removal temperature of the metal nano paste, thereby removing the binder and the dispersant, while pressurizing and sintering the metal nanoparticles in each bump.

A bonding apparatus that bonds semiconductor dies in a three dimensional manner, the apparatus comprising:

• a bump formation mechanism that forms a bump on the electrode by injecting microdroplets of a metal nano paste onto the electrode;
• a primary bonding mechanism that carries out primary bonding to electrodes in a non-conductive state by pressing a bump formed by injecting microdroplets of a metal nano paste in which metal nanoparticles surface-coated by a dispersant are contained in a binder in a paste form on an electrode of a semiconductor die against a bump formed by injecting microdroplets of the metal nano paste on an electrode of a different semiconductor die, and by heating each bump up to a predetermined temperature that is higher than a room temperature and lower than the binder removal temperature of the metal nano paste;
• and
• a secondary bonding mechanism that includes a pressurizing unit that pressurizes the primary bonded bump in bonding direction, and that carries out secondary bonding so that the electrodes become conductive by heating the bump up to a temperature higher than a binder removal temperature of the metal nano paste and a dispersant removal temperature of the metal nano paste, thereby removing the binder and the dispersant while pressurizing and sintering the metal nanoparticles in each bump.

A bonding apparatus that bonds an electrode of a semiconductor die with an electrode of a substrate, the apparatus comprising:

• a bump formation mechanism that forms a bump on the electrode by injecting microdroplets of a metal nano paste onto the electrode;
• a metal projection forming mechanism that forms the metal projection on the electrode;
• a primary bonding mechanism that carries out primary bonding to the electrodes in a non-conductive state by pressing a bump formed by injecting microdroplets of a metal nano paste in which metal nanoparticles surface-coated by a dispersant are contained in a binder in a paste form on one of the electrodes against a metal projection formed on the other electrode, and by heating each bump up to a predetermined temperature that is higher than a room temperature and lower than the binder removal temperature of the metal nano paste;
• and
• a secondary bonding mechanism that includes a pressurizing unit that pressurizes the primary bonded bump in a bonding direction, and that carries out secondary bonding so that the electrodes become conductive by heating the bump up to a temperature higher than a binder removal temperature of the metal nano paste and a dispersant removal temperature of the metal nano paste, thereby removing the binder and the dispersant while pressurizing and sintering the metal nanoparticles in the bump.

A bonding method of bonding an electrode of a semiconductor die with an electrode of a substrate, the method comprising:

• a bump formation step of forming a bump on the electrode by injecting microdroplets of a metal nano paste onto the electrode;
• a primary bonding step of carrying out primary bonding to the electrodes in a non-conductive state by pressing a bump formed by injecting microdroplets of a metal nano paste in which metal nanoparticles surface-coated by a dispersant are contained in a binder in a paste form on one of the electrodes against the other electrode, and by heating each bump up to a predetermined temperature that is higher than a room temperature and lower than the binder removal temperature of the metal nano paste;
• and
• a secondary bonding step of carrying out secondary bonding so that the electrodes become conductive by changing the pressurizing force that pressurizes the primary bonded bump in a bonding direction according to time, heating the bump up to a temperature higher than a binder removal temperature of the metal nano paste and a dispersant removal temperature of the metal nano paste, thereby removing the binder and the dispersant while pressurizing and sintering the metal nanoparticles in the bump.

A bonding method of bonding an electrode of a semiconductor die with an electrode of a substrate, the method comprising:

• a bump formation step of forming a bump on the electrode by injecting microdroplets of a metal nano paste onto the electrode;
• a primary bonding step of carrying out primary bonding to the electrodes in a non-conductive state by pressing bumps respectively formed by injecting microdroplets of a metal nano paste in which metal nanoparticles surface-coated by a dispersant are contained in a binder in a paste form on the electrodes against each other, and by heating each bump up to a predetermined temperature that is higher than a room temperature and lower than the binder removal temperature of the metal nano paste;
• and
• a secondary bonding step of carrying out secondary bonding so that the electrodes become conductive by changing the pressurizing force that pressurizes the primary bonded bump in a bonding direction according to time, heating each bump up to a temperature higher than a binder removal temperature of the metal nano paste and a dispersant removal temperature of the metal nano paste, thereby removing the binder and the dispersant while pressurizing and sintering the metal nanoparticles in each bump.

A bonding method of bonding semiconductor dies in a three dimensional manner, the method comprising:

• a bump formation step of forming a bump on the electrode by injecting microdroplets of a metal nano paste onto the electrode;
• a primary bonding step of carrying out primary bonding to electrodes in a non-conductive state by pressing a bump formed by injecting microdroplets of a metal nano paste in which metal nanoparticles surface-coated by a dispersant are contained in a binder in a paste form on an electrode of a semiconductor die against a bump formed by injecting microdroplets of the metal nano paste on an electrode of a different semiconductor die, and by heating each bump up to a predetermined temperature that is higher than room temperature and lower than the binder removal temperature of the metal nano paste;
• and
• a secondary bonding step of carrying out secondary bonding so that the electrodes become conductive by changing the pressurizing force that pressurizes the primary bonded bump in a bonding direction according to time, heating each bump up to a temperature higher than a binder removal temperature of the metal nano paste and a dispersant removal temperature of the metal nano paste, thereby removing the binder and the dispersant while pressurizing and sintering the metal nanoparticles in each bump.

A bonding method of bonding an electrode of a semiconductor die with an electrode of a substrate, the method comprising:

• a bump formation step of forming a bump on the electrode by injecting microdroplets of a metal nano paste onto the electrode;
• a metal projection formation step of forming the metal projection on the electrode;
• a primary bonding step of carrying out primary bonding to the electrodes in a non-conductive state by pressing a bump formed by injecting microdroplets of a metal nano paste in which metal nanoparticles surface-coated by a dispersant are contained in a binder in a paste form on one of the electrodes against a metal projection formed on the other electrode, and by heating each bump up to a predetermined temperature that is higher than a room temperature and lower than the binder removal temperature of the metal nano paste;
• and
• a secondary bonding step of carrying out secondary bonding so that the electrodes become conductive by changing the pressurizing force that pressurizes the primary bonded bump in a bonding direction according to time, heating the bump up to a temperature higher than a binder removal temperature of the metal nano paste and a dispersant removal temperature of the metal nano paste, thereby removing the binder and the dispersant while pressurizing and sintering the metal nanoparticles in the bump.