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US 7,726,198 B2Granted
Strain sensor
AssigneeFujitsu Limited
InventorsJohn D. Baniecki, Takeshi Shioga, Kazuaki Kurihara
Life of this patent
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Abstract
A strain sensor comprises a capacitor formed on a substrate, the capacitor having a layered structure in which a lower electrode, a metal oxide film of perovskite structure and an upper electrode are laminated consecutively on the substrate, the capacitor being adapted to be mounted upon a specimen, and a measuring circuit that measures a leakage current flowing through the capacitor between the upper electrode and the lower electrode.
Claims17
A strain sensor comprising:
- a capacitor formed on a substrate, said capacitor having a layered structure in which a lower electrode, a metal oxide film of perovskite structure and an upper electrode are laminated consecutively on said substrate, said capacitor being adapted to be mounted upon a specimen, which applies a stress to said capacitor in a thickness direction thereof;
- and
- a measuring circuit that measures a leakage current flowing through said capacitor to which said stress is applied between said upper electrode and said lower electrode.
Dependencies are inferred from the claim text.