Method for producing actuator device
AssigneeSeiko Epson Corporation
InventorsXin-Shan Li, Tsutomu Nishiwaki
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Abstract
A method for producing an actuator device, comprising the steps of: forming a vibration plate on a substrate; and forming a piezoelectric element composed of a lower electrode, a piezoelectric layer, and an upper electrode on the vibration plate, wherein in the step of forming the piezoelectric element, the upper electrode is formed on the piezoelectric layer by sputtering, a temperature of 25 to 250 (° C.) and a pressure of 0.4 to 1.5 (Pa) are used during the sputtering, and upon the sputtering, the upper electrode having a thickness of 30 to 100 (nm), stress of 0.3 to 2.0 (GPa), and specific resistance of 2.0 (×10−7 Ω·m) or less is formed.
Claims2
A method for producing an actuator device, comprising the steps of:
- forming a vibration plate on a substrate;
- and forming a piezoelectric element composed of a lower electrode, a piezoelectric layer, and an upper electrode on the vibration plate, wherein in the step of forming the piezoelectric element, the upper electrode is formed on the piezoelectric layer by sputtering, a temperature of 25 to 250° C. and a pressure of 0.4 to 1.5 Pa are used during the sputtering, and upon the sputtering, the upper electrode having a thickness of 30 to 100 nm, stress of 0.3 to 2.0 GPa, and specific resistance of 2.0×10−7 Ω·m or less is formed, and iridium is used as a material for the upper electrode.
Dependencies are inferred from the claim text.