Semiconductor light-emitting device and its manufacturing method
AssigneeHamamatsu Photonics K.K.
InventorAkimasa Tanaka
Life of this patent
Estimating the term…
Abstract
A semiconductor light-emitting device comprises a multilayer structure and a glass substrate. The multilayer structure includes a plurality of laminated compound semiconductor layers and generates light. The multilayer structure has a light exit face for emitting the generated light, whereas the glass substrate optically transparent to the light is bonded to the light exit face by a film made of silicon oxide.
Claims6
A semiconductor light-emitting device comprising a multilayer structure, the multilayer structure including a plurality of compound semiconductor layers laminated and the multilayer structure generating light;
- the multilayer structure having a light exit face for emitting the generated light, a glass substrate optically transparent to the light being fixed to the light exit face by way of a film made of silicon oxide;
- wherein the multilayer structure includes a first distributed Bragg reflector (DBR) layer of a first conductive type, a first cladding layer of the first conductive type, an active layer, a second cladding layer of a second conductive type, and a second DBR layer of the second conductive type sequentially laminated as the plurality of compound semiconductor layers;
- wherein the multilayer structure has a multilayer region partially including the first DBR layer, first cladding layer, active layer, second cladding layer, and second DBR layer;
- and an insulated or semi-insulated current-narrowing region surrounding the multilayer region;
- wherein the first DBR layer is arranged between the first cladding layer and the film made of silicon oxide;
- wherein the multilayer structure further comprises a contact layer of the first conductive type positioned between the film made of silicon oxide and the first DBR layer;
- wherein the multilayer structure has;
- a light-emitting part including the multilayer region;
- and
- a pad electrode mounting part partially including the first DBR layer, first cladding layer, active layer, second cladding layer, and second DBR layer;
- the semiconductor light-emitting device further comprising:
- a first pad electrode arranged on the light-emitting part and electrically connected to the multilayer region;
- and
- a second pad electrode arranged on the pad electrode mounting part and electrically connected to the contact layer,
- wherein the second pad electrode is electrically connected to the contact layer through an opening formed between the light-emitting part and the pad electrode mounting part.
Dependencies are inferred from the claim text.