Solid state imaging device and method of manufacturing the same
AssigneeFUJIFILM Corporation
InventorsMasanori Nagase, Jiro Matsuda, Tsuneo Sasamoto, Toshiaki Hayakawa
Life of this patent
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Abstract
A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelectric converting portion and transfers the signal charge in a predetermined direction; and a gate electrode that transfers the signal charge from the photoelectric converting portion to the charge transfer path, wherein the gate electrode comprises polysilicon having a different conductive type from that of a semiconductor region forming a charge storing portion of the charge transfer path.
Claims8
A solid state imaging device comprising:
- a photoelectric converting portion provided on a semiconductor substrate;
- a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelectric converting portion and transfers the signal charge in a predetermined direction;
- and
- a gate electrode that transfers the signal charge from the photoelectric converting portion to the charge transfer path,
- wherein the gate electrode comprises polysilicon having a different conductive type from that of a semiconductor region forming a charge storing portion of the charge transfer path,
- wherein the charge storing portion of the charge transfer path is formed in an adjacent position to the photoelectric converting portion and is not part of the photoelectric converting portion.
Dependencies are inferred from the claim text.