Surface-stabilized semiconductor device
AssigneeSanken Electric Co., Ltd.
InventorsKoji Otsuka, Osamu Machida, Hitoshi Murofushi
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Abstract
A high electron mobility transistor is disclosed which has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source, drain, and gate overlie the electron supply layer. Also formed on the electron supply layer is a surface-stabilizing organic semiconductor overlay which is of p conductivity type in contrast to the n type of the electron supply layer.
Claims7
A surface-stabilized semiconductor device comprising:
- (a) a substrate having a major surface;
- (b) a first semiconductor layer formed on the major surface of the substrate by epitaxially growing a first nitride semiconductor;
- (c) a second semiconductor layer of n conductivity type formed on the first semiconductor layer by epitaxially growing a second nitride semiconductor thereon for generating two-dimensional electron gas;
- (d) a source and a drain disposed on the second semiconductor layer;
- (e) a gate disposed between the source and the drain on the second semiconductor layer;
- and
- (f) an organic semiconductor overlay of p conductivity type at least partly covering the second semiconductor layer in a position between the source and the drain, the organic semiconductor overlay having a carrier mobility less than the carrier mobility of the second semiconductor layer.
A surface-stabilized semiconductor device comprising:
- (a) a substrate having a major surface;
- (b) a first semiconductor layer formed on the major surface of the substrate by epitaxially growing a first nitride semiconductor;
- (c) a second semiconductor layer of p conductivity type formed on the first semiconductor layer by epitaxially growing a second nitride semiconductor thereon for generating two-dimensional hole gas;
- (d) a source and a drain disposed on the second semiconductor layer;
- (e) a gate disposed between the source and the drain on the second semiconductor layer;
- and
- (f) an organic semiconductor overlay of n conductivity type at least partly covering the second semiconductor layer in a position between the source and the drain, the organic semiconductor overlay having a carrier mobility less than the carrier mobility of the second semiconductor layer.
A surface-stabilized semiconductor device comprising:
- (a) a substrate having a major surface;
- (b) a first semiconductor layer formed on the major surface of the substrate by epitaxially growing a first nitride semiconductor;
- (c) a second semiconductor layer of the first conductivity type formed on the first semiconductor layer by epitaxially growing a second nitride semiconductor thereon for generating two-dimensional carrier gas;
- (d) a first electrode on a major surface of the second semiconductor layer making Schottky contact therewith;
- (e) a second electrode on the major surface of the second semiconductor layer making ohmic contact therewith;
- and
- (f) an organic semiconductor overlay of a second conductivity type, opposite to the first conductivity type, at least partly covering the second semiconductor layer in a position between the first and the second electrode for surface stabilization, the organic semiconductor overlay having a carrier mobility less than the carrier mobility of the second semiconductor layer.
Dependencies are inferred from the claim text.