US 7,709,378 B2Granted

Method and apparatus for processing thin metal layers

AssigneeThe Trustees of Columbia University in the City of New York

InventorJames S. Im

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Abstract

A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern defined by a mask to have shadow regions and beamlets. Each region of the metal layer overlapped by a beamlet is melted throughout its entire thickness, and each region of the metal layer overlapped by a shadow region remains at least partially unmelted. After completion of resolidification of the melted regions following irradiation by the first excimer laser pulse, the metal layer is irradiated by a second excimer laser pulse having a shifted intensity pattern so that the shadow regions overlap regions of the metal layer having fewer and larger grains.

Claims27

Dependent claims

An apparatus for processing a thin metal layer disposed on a substrate comprising:

(a) a pulsed radiation beam source configured to provide radiation beam pulses of sufficient strength to melt the thin metal layer throughout its entire thickness;
(b) a beam mask configured to define, upon incidence of the radiation beam pulses, a respective intensity pattern of each one of the radiation beam pulses for irradiating at least a portion of the metal layer, the intensity pattern having at least one strip comprising of one or more shadow regions, having a width, and at least one strip comprising of one or more beamlets, having a width,
wherein the beam mask is further configured such that during irradiation by a radiation beam pulse, each region of the at least a portion of the metal layer is overlapped by a respective one of the at least one strip comprising of one or more beamlets, and each region of the at least a portion of the metal layer is overlapped by a respective one of the at least one strip comprising of one or more shadow regions,
and wherein the width of the at least one strip comprising of one or more shadow regions is less than the width of the at least one strip comprising of one or more beamlets;
(c) a sample translation stage configured to hold the metal layer on the substrate while the at least a portion of the metal layer is being irradiated by the radiation beam pulses, and configured to translate the metal layer on the substrate in a lateral direction with respect to the radiation beam pulses;
and
wherein the sample translation stage is further configured to microtranslate the substrate having the metal layer in a lateral direction with respect to the radiation beam pulses so as to shift the intensity pattern of the radiation beam pulses with respect to the metal layer from one radiation beam pulse to another.

4 more elements

An apparatus for processing a thin metal layer disposed on a substrate comprising:

(a) a pulsed radiation beam source configured to provide radiation beam pulses of sufficient strength to melt the thin metal layer throughout its entire thickness;
(b) a beam mask configured to define, upon incidence of the radiation beam pulses, a respective intensity pattern of each one of the radiation beam pulses for irradiating at least a portion of the metal layer, the intensity pattern having at least two adjacent sawtooth shaped beamlets, each having at least one upward pointing apex and at least one downward pointing apex, and at least one shadow region between and adjoining the at least two adjacent sawtooth shaped beamlets,
wherein the beam mask is further configured such that during irradiation by a radiation beam pulse, each region of the at least a portion of the metal layer is overlapped by a respective one of the at least two sawtooth shaped beamlets, and each region of the at least a portion of the metal layer is overlapped by a respective one of the at least one shadow region,
and wherein the at least two adjacent sawtooth shaped beamlets are staggered with respect each other such that the at least one upward pointing apex of each of the at least two adjacent sawtooth shaped beamlets is out of alignment with respect to the at least one upward pointing apex of another of the at least two adjacent sawtooth shaped beamlets;
(c) a sample translation stage configured to hold the metal layer on the substrate while the at least a portion of the metal layer is being irradiated by the radiation beam pulses, and configured to translate the metal layer on the substrate in a lateral direction with respect to the radiation beam pulses;
and
wherein the sample translation stage is further configured to microtranslate the substrate having the metal layer in a lateral direction with respect to the radiation beam pulses so as to shift the intensity pattern of the radiation beam pulses with respect to the metal layer from one radiation beam pulse to another.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/502,056Filed 10 Aug 2006 · continuation
Priority: 10 Oct 2000
Published: US 2009/0140173 A14 Jun 2009
Granted: 4 May 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 1/692
Capacitors having no potential barriers: electrodes
H10W 20/031
Manufacture or treatment: of conductive parts of the interconnections
H10W 20/068
By modifying the pattern of conductive parts: by using a laser, e.g. laser cutting or laser direct writing
Y10S 438/94
Semiconductor device manufacturing: process: laser ablative material removal

Family

Application60/239,194Us provisional application · filed 10 Oct 2000
PCT/US01/31391Parent of this continuation · filed 9 Oct 2001
US 7,115,503 B2Parent of this continuation · filed 18 Apr 2002
US 2009/0140173 A1Pre-grant publication · published 4 Jun 2009
Application10/129,159Parent of this continuation
US 2003/0029212 A1Published application
US 7,709,378 B2This patent

From the US filing history. Foreign family members aren’t listed.