Leakage compensation during program and read operations

A non-volatile memory, comprising:

• a non-volatile memory array having a plurality of non-volatile memory cells;
• a data cache having a plurality of storage devices;
• and
• a charge leakage model;
• wherein the non-volatile memory is adapted to compensate the plurality of storage devices for uniform charge loss at least partially based on an output of the charge leakage model by,
• estimating a charge loss using the charge leakage model,
• storing a plurality voltages in the plurality of storage devices of the data cache, and
• compensating the plurality of analog storage devices for charge loss at least partially based on the charge leakage model.

A method of operating a memory, comprising:

• initiating a charge leakage model;
• transferring a plurality of voltages to a memory and storing them in a plurality of storage devices of a data cache of the memory;
• and
• compensating the plurality of storage devices for non-uniform charge loss at least partially based on an output of the charge leakage model.

A non-volatile memory, comprising:

• a non-volatile memory array having a plurality of non-volatile memory cells;
• a data cache having a plurality of storage devices;
• and
• a charge leakage model;
• wherein the non-volatile memory is adapted to compensate the plurality of storage devices of a data cache of the non-volatile memory at least partially based on an output of the charge leakage model by,
• initiating the charge leakage model,
• transferring a plurality of voltages to a memory and storing them in the plurality of storage devices of the data cache, and
• compensating the plurality of storage devices for charge loss at least partially based on an output of the charge leakage model.

A method of operating a memory, comprising:

• initiating a memory operation;
• initiating a charge leakage model;
• transferring a plurality of voltages to a memory and storing them in a plurality of storage devices of a data cache of the memory;
• and
• compensating the plurality of storage devices for charge loss at least partially based on an output of the charge leakage model while executing the memory operation in the memory.