Ferroelectric memory using multiferroics

A multiferroic memory unit, comprising:

• a substrate having a source region, a drain region and a channel region, the channel region separates the source region and the drain region;
• an electrically insulating layer adjacent to the source region, drain region and channel region;
• a data storage cell comprising a composite multiferroic layer adjacent to the electrically insulating layer, the composite multiferroic layer comprises a ferromagnetic material in a matrix of a ferroelectric material or a ferroelectric material in a matrix of a ferromagnetic material, the electrically insulating layer separates the data storage cell form the channel region;
• and
• a control gate electrode adjacent to the data storage cell, the data storage cell separates at least a portion of the control gate electrode from the electrically insulating layer;
• and
• a second control gate electrode adjacent to the electrically insulating layer, the source region, and the drain region, and a second data storage cell comprising a second composite multiferroic layer, the second data storage cell separates the electrically insulating layer from the second control gate electrode, and the second data storage cell is separated from the data storage cell.