Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas

A method of reducing the plasma erosion of a semiconductor processing apparatus contacted by a halogen-containing plasma, comprising:

• employing a solid solution ceramic-comprising article, said solid solution ceramic formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %;
• zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %;
• and at least one other component selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, said at least one other component concentration ranging from about 10 mole % to about 30 mole %.

A semiconductor processing apparatus which has at least one surface exposed to a halogen-comprising plasma during said semiconductor processing, wherein said semiconductor processing apparatus surface is a solid solution ceramic, said solid solution ceramic being resistant to erosion by halogen-containing plasmas, wherein said ceramic includes at least two phases and is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %;

• zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %;
• and at least one other component selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, said at least one other component concentration ranging from about 10 mole % to about 30 mole %.

A method of reducing the plasma erosion of a semiconductor processing apparatus contacted by a halogen-containing plasma, comprising:

• spray coating at least a surface of said semiconductor processing apparatus which is exposed to said plasma with a solid solution ceramic formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %;
• zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %;
• and at least one other component selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, said at least one other component concentration ranging from about 10 mole % to about 30 mole %.