Surface-emitting laser device and surface-emitting laser array including same

A surface-emitting laser device, comprising:

• a first reflective layer formed of a semiconductor distributed Bragg reflector on a substrate;
• a second reflective layer formed in contact with the first reflective layer;
• a cavity including an active layer, the cavity being formed in contact with the second reflective layer;
• a third reflective layer formed in contact with the cavity;
• and
• a fourth reflective layer formed in contact with the third reflective layer,
• wherein the cavity is formed of an AlGaInPAs-system material;
• the second reflective layer includes a layered body of N first high refractive index layers and N first low refractive index layers that are alternately stacked, where N is a positive integer;
• the third reflective layer includes a layered body of M second high refractive index layers and M second low refractive index layers that are alternately stacked, where M is a positive integer;
• each of the N first low refractive index layers and the M second low refractive index layers is formed of (AlxGa1−x)0.5In0.5P (0≦x≦1),
• each of the N first high refractive index layers and the M second high refractive index layers is formed of (AlyGa1−y)0.5In0.5P (0≦y<x≦1);
• one of the N first low refractive index layers is in contact with the cavity, and one of the N first high refractive index layers is in contact with an AlGaAs-system material forming the first reflective layer;
• and
• one of the M second low refractive index layers is in contact with the cavity, and one of the M second high refractive index layers is in contact with an AlGaAs-system material forming the fourth reflective layer.