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US 7,688,152 B2Granted
High frequency stabilization network for microwave devices and monolithic integrated circuits
AssigneeTriQuint Semiconductor, Inc.
InventorsHua Quen Tserng, Warren Robert Gaiewski, David Michael Fanning
Life of this patent
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Abstract
A high-frequency stabilization network for microwave devices and monolithic integrated circuits. The stabilization network may comprise one or more monolithic RL parallel networks, configured to reduce in-band high-frequency oscillation, such as Gunn effect oscillation and IMPATT oscillation.
Claims18
A circuit, comprising;
- a FET having high-frequency negative resistance, wherein the FET has a gate, a source, and a drain, and wherein the gate comprises a plurality of monolithically formed gate fingers;
- and
- a stabilization circuit coupled to the FET and configured to reduce the high-frequency negative resistance, wherein the stabilization circuit comprises a resistor and an inductor, and wherein the stabilization circuit is coupled to the drain.
Dependencies are inferred from the claim text.