Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows

A method for processing a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams, each structure having two ends and characterized by a length, width and depth, the length being measured in a lengthwise direction between the two ends, the width being measured in a widthwise direction transverse to the length, the depth being measured in a depthwise direction transverse to both the length and the width, the length being greater that both of the width and depth, at least some of the structures being arranged in a generally common orientation in parallel rows extending in the widthwise direction of the structures, wherein adjacent structures in the same row are spaced apart by a generally uniform pitch in the widthwise direction of the structures, the method comprising:

• generating a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate;
• generating a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate, the second target location being offset from the first target location in the lengthwise direction by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row;
• and
• moving the semiconductor substrate relative to the first and second laser axes in the widthwise direction, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.

A method for processing a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams, the structures being arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction, the method comprising:

• generating first and second laser beams that propagates along respective first and second laser beam axes that intersect the semiconductor substrate at respective first and second beam spots;
• offsetting the first and second laser beam axes from one another in a direction perpendicular to the lengthwise direction of the rows by some amount such that the first and second laser beam spots fall on distinct rows of structures;
• passing the first and second beam spots in unison across a given row and another row distinct from said given row, respectively, while the first laser provides first laser irradiation to selected structures in said given row;
• and
• passing the second and first beam spots in unison across said given row and another row distinct from the given row, respectively, while the second laser provides second laser irradiation to said selected structures in said given row,
• whereby said selected structures in said given row receive first laser irradiation form the first laser during the first passing step and later receive second laser irradiation from the second laser during the second passing step.