Solid-state RF power amplifier for radio transmitters
OwnerSteven M. Dishopinventor
Life of this patent
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Abstract
An RF power amplifier includes first and second field effect transistors having a gate, a source, and a drain, having an output power rating of at least 200 watts, and operating with a drain-to-source voltage that is greater than 50 VDC. The transistors are configured as a push-pull amplifier. The amplifier further includes an RF signal input. A input transformer is connected to the RF signal input. The input transformer has respective balanced outputs connected to the gates of the transistors. A broadband output transformer has a first balanced input connected to the drain of one the transistors, and a second balanced input connected to the drain of the other transistor. The broadband output transformer has an input to output impedance ratio of 1:4.
Claims39
An RF power amplifier, comprising:
- a first field effect transistor:
- having a first gate, a first source, and a first drain,
- having an output power rating of at least 200 watts, and
- operating with a drain-to-source voltage that is greater than 50 VDC;
- a second field effect transistor:
- having a second gate, a second source, and a second drain,
- having an output power rating of at least 200 watts, and
- operating with a drain-to-source voltage that is greater than 50 VDC;
- wherein said transistors are configured as a push-pull amplifier;
- an RF signal input;
- an input transformer connected to the RF signal input, the input transformer having respective balanced outputs connected to the first gate and the second gate;
- and
- a broadband output transformer having a first balanced input connected to the first drain, and a second balanced input connected to the second drain, wherein the broadband output transformer has an input to output impedance ratio of 1:4, and further wherein at least some flux cancellation occurs within the broadband output transformer.
An RF power amplifier, comprising:
- a first plurality of field effect transistors having directly interconnected drains and respective output power ratings of at least 100 watts;
- a second plurality of field effect transistors having directly interconnected drains and respective output power ratings of at least 100 watts;
- wherein said transistors operate with a drain-to-source voltage that is greater than 50 VDC, and
- wherein the first plurality of field effect transistors and the second plurality of field effect transistors together form a push-pull amplifier having an output power rating of at least 400 watts;
- an RF signal input;
- an input transformer connected to the RF signal input, the input transformer having respective balanced outputs connected to gates of the first plurality of field effect transistors and gates of the second plurality of field effect transistors;
- and
- a broadband output transformer having a first balanced input connected to the drains of the first plurality of field effect transistors, and a second balanced input connected to the drains of the second plurality of field effect transistors, wherein the broadband output transformer has an input to output impedance ratio of 1:4, and further wherein at least some flux cancellation occurs within the broadband output transformer.
Dependencies are inferred from the claim text.