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US 7,683,323 B2Granted
Organic field effect transistor systems and methods
AssigneeThe Trustees of Columbia University in the City of New York
InventorIoannis Kymissis
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Abstract
An OFET on a pyroelectric or piezoelectric substrate, such as PVDF, can provide highly adaptable and manufacturable radiation or acoustic sensing. Local charge amplification can be provided, such to construct an array of sensing pixels, which can be configured in an active or passive matrix. A susceptor or guide element can be provided. Systems, devices, methods of making, and methods of using are among the examples described.
Claims27
A device comprising:
- a flexible pyroelectric substrate;
- a conductive field-effect transistor (FET) gate, formed on the substrate;
- an organic gate dielectric, formed on the gate and on the substrate near the gate;
- a conductive FET source, formed on the gate dielectric near a first edge of the gate;
- a conductive FET drain, formed on the gate dielectric near a second edge of the gate that is located across the gate from the first edge of the gate;
- an organic semiconductor FET body region, formed on the gate, the source, and the drain;
- an organic passivation layer, formed on the semiconductor body region;
- and
- wherein the gate, the source, and the drain are configured as a FET amplifier to locally amplify a pyroelectric-generated charge, sensed at the gate from an local region of the substrate that is adjacent to the gate, into a resulting current between the source and drain.
6 more elements
A method comprising:
- forming a conductive field-effect transistor (FET) gate, on a pyroelectric substrate;
- forming an organic gate dielectric, on the gate and on the substrate near the gate;
- forming a conductive FET source, on the gate dielectric near a first edge of the gate;
- forming a conductive FET drain, on the gate dielectric near a second edge of the gate that is located across the gate from the first edge of the gate;
- forming an organic semiconductor FET body region, on the gate, the source, and the drain;
- forming an organic passivation layer, on the semiconductor body region;
- and
- configuring the gate, the source, and the drain as a FET amplifier to locally amplify a pyroelectric-generated charge, sensed at the gate from a local region of the substrate that is adjacent to the gate, into a resulting current between the source and drain.
5 more elements
A method comprising:
- providing a FET device comprising:
- a pyroelectric substrate;
- a conductive field-effect transistor (FET) gate, formed on the substrate;
- an organic gate dielectric, formed on the gate and on the substrate near the gate;
- a conductive FET source, formed on the gate dielectric near a first edge of the gate;
- a conductive FET drain, formed on the gate dielectric near a second edge of the gate that is located across the gate from the first edge of the gate;
- an organic semiconductor FET body region, formed on the gate, the source, and the drain;
- an organic passivation layer, formed on the semiconductor body region;
- and
- wherein the gate, the source, and the drain are configured as a FET amplifier;
- and
- sensing a pyroelectric-generated charge at the gate from a local region of the substrate that is adjacent to the gate;
- and
- locally amplifying the pyroelectric-generated charge into a resulting current between the source and drain.
11 more elements
Dependencies are inferred from the claim text.