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US 7,683,001 B2Granted
Dielectric layers and memory cells including metal-doped alumina
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.
Claims3
A dielectric layer composition comprising an yttrium metal-doped aluminum oxide consisting of yttrium, aluminum, and oxygen, wherein the mole ratio of the yttrium to aluminum is 1:99 to 10:90.
Dependencies are inferred from the claim text.