Resistance variable memory with temperature tolerant materials

A method of forming a resistance variable memory device, comprising:

• providing a substrate;
• forming a conductive address line over said substrate;
• forming a first insulating layer over said address line and said substrate;
• forming an opening in said first insulating layer to expose a portion of said address line in said opening;
• forming a first electrode layer in said opening and over said address line;
• forming a Sb2Se3 glass layer over said first electrode;
• forming a metal-chalcogenide layer comprising tin-selenide over said Sb2Se3 glass layer;
• forming a first chalcogenide glass layer over said metal-chalcogenide layer;
• forming a metal layer over said first chalcogenide glass layer;
• forming a second chalcogenide glass layer over said metal layer;
• forming a second electrode layer over said second chalcogenide glass layer;
• and
• etching to form a stack of said Sb2Se3 glass layer, said metal-chalcogenide layer, said first chalcogenide glass layer, said metal layer, said second chalcogenide glass layer, and said second electrode layer over said first electrode layer.