Phase change alloy etch
AssigneeLam Research Corporation
InventorsQian Fu, Shenjian Liu, Linda Fung-Ming Lee
Life of this patent
Estimating the term…
Abstract
A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be heated by a current and then when cooled, either forms an amorphous material or a crystalline material, depending on how fast the material is cooled. In addition, the amorphous material has a resistance at least several times greater than the crystalline material.
Claims13
A method of forming devices, comprising:
- providing a phase change layer selected from the group consisting of a germanium/antimony/tellurium alloy and an antimony/tellurium alloy;
- providing an electrode layer over the phase change layer;
- opening the electrode layer and etching the phase change layer with an etching process comprising the steps of:
- providing an etch gas comprising HBr;
- and forming a plasma from the etch gas;
- and
- flashing a passivation layer created during the etching of the phase change layer, wherein the flashing removes the passivation layer.
A method of forming devices, comprising:
- providing a phase change layer comprising one of an alloy of germanium, antimony, and tellurium and an alloy of antimony and tellurium;
- providing an electrode layer over the phase change layer;
- opening the electrode layer, comprising the steps of:
- providing an etch gas comprising:
- HBr, at least one of a fluorine containing compound and a chlorine containing compound and a noble gas;
- forming a plasma from the etch gas;
- and
- maintaining a wafer temperature below 40° C.;
- etching the phase change layer, comprising the steps of:
- providing an etch gas comprising:
- HBr, at least one of a fluorine containing compound and a chlorine containing compound and a noble gas;
- forming a plasma from the etch gas;
- and
- maintaining a wafer temperature below 40° C.;
- flashing a passivation layer created during the etching the phase change layer, wherein the flashing removes the passivation layer;
- wherein a flow rate of the noble gas is greater than a flow rate of the HBr;
- and
- wherein a flow rate of the at least one of a fluorine containing compound and a chlorine containing compound is less than the flow rate of the HBr.
An apparatus for forming features in a phase change layer disposed, comprising:
- a plasma processing chamber, comprising:
- a chamber wall forming a plasma processing chamber enclosure;
- a substrate support for supporting a substrate within the plasma processing chamber enclosure;
- a pressure regulator for regulating the pressure in the plasma processing chamber enclosure;
- at least one electrode for providing power to the plasma processing chamber enclosure for sustaining a plasma;
- a gas inlet for providing gas into the plasma processing chamber enclosure;
- and
- a gas outlet for exhausting gas from the plasma processing chamber enclosure;
- a gas source in fluid connection with the gas inlet, comprising:
- a bromine containing compound gas source;
- a noble gas source;
- and
- an at least one of a fluorine containing compound and chlorine containing compound gas source;
- and
- a controller controllably connected to the gas source and the at least one electrode, comprising:
- at least one processor;
- and
- computer readable media, comprising:
- computer readable code for providing an etch gas comprising a bromine containing compound;
- computer readable code for forming a plasma from the etch gas;
- and
- computer readable code for flashing a passivation layer created during the forming a plasma from the etch gas, wherein the flashing removes the passivation layer.
Dependencies are inferred from the claim text.