Plasma processing method and high-rate plasma etching apparatus
AssigneeTokyo Electron Limited
InventorsKoji Maruyama, Yusuke Hirayama
Life of this patent
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Abstract
A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a ceiling portion, there being formed a plasma processing space between the mounting table and the ceiling portion, includes the steps of mounting a target object on the mounting table, setting a gap between the ceiling portion and the mounting table to be greater than about 25 mm and less than about 65 mm, and performing a plasma processing on the target object by generating a plasma in the processing space. The target object includes an opening pattern having openings and at least parts of the openings are equal to or greater than about 500 μm.
Claims15
A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a shower head, there being formed a plasma processing space between the mounting table and the shower head, the method comprising the steps of:
- mounting a target object on the mounting table, the target object including an opening pattern having openings, opening sizes of at least parts of the openings being equal to or greater than about 500 μm;
- setting a gap between the shower head and the mounting table to be greater than about 25 mm and less than about 65 mm;
- and
- performing a plasma processing on the target object by generating a plasma in the processing space,
- wherein the plasma processing is a silicon etching processing, and
- wherein the plasma processing is performed at an etching rate equal to or greater than about 5 μm/min such that the etching rate at a peripheral portion of the target object is substantially uniform with the etching rate at a central portion.
A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a shower head, there being formed a plasma processing space between the mounting table and the shower head, the method comprising the steps of:
- mounting a target object on the mounting table, the target object including an opening pattern having openings, opening sizes of at least parts of the openings being equal to or greater than about 500 μm;
- setting a gap between the shower head and the mounting table to be greater than about 25 mm and less than about 65 mm;
- and
- performing a plasma processing on the target object by generating a plasma in the processing space,
- wherein the plasma processing is performed at an etching rate equal to or greater than about 5 μm/min such that the etching rate at a peripheral portion of the target object is substantially uniform with the etching rate at a central portion.
Dependencies are inferred from the claim text.