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US 7,682,975 B2Granted
Semiconductor device fabrication method
AssigneeKabushiki Kaisha Toshiba
InventorsDai Fukushima, Gaku Minamihaba, Hiroyuki Yano
Life of this patent
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Abstract
A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.
Claims14
A method for fabricating a semiconductor device, comprising:
- forming a thin film made of copper (Cu) on a top surface of a substrate;
- polishing a back surface of said substrate, surface portions of said thin film being used as a protective film during polishing the back surface of said substrate, wherein the surface portions of said thin film are a top most film during polishing the back surface of said substrate
- wherein said substrate has on the back surface thereof a diffusion prevention film made of one of silicon nitride (SiN), silicon carbide (SiC), and silicon oxide carbide (SiOC) for preventing diffusion of said Cu, and wherein said diffusion prevention film is polished during the polishing of the back surface of said substrate;
- and
- polishing said surface portions of said thin film after polishing said diffusion prevention film on the back surface of said substrate.
2 more elements
A method for fabricating a semiconductor device comprising:
- forming a diffusion prevention film made of one of silicon nitride (SiN), silicon carbide (SiC), and silicon oxide carbide (SiOC) for preventing diffusion of copper (Cu) on a back surface of a substrate;
- forming on a top surface of said substrate a conductive material film using said Cu with its diffusion being prevented by said diffusion prevention film;
- after formation of said conductive material film, polishing the diffusion prevention film formed on the back surface of said substrate by using a polishing liquid containing therein any one of resin particles and colloidal silica, surface portions of said conductive material film being used as a protective film during polishing the diffusion prevention film, wherein the surface portions of said conductive material film are a top most film during polishing the diffusion prevention;
- and
- polishing said surface portions of said conductive material film after polishing said diffusion prevention film.
2 more elements
Dependencies are inferred from the claim text.