Back to results
US 7,682,974 B2Granted
Method for manufacturing semiconductor device
AssigneeSpansion LLC
InventorsFumihiko Inoue, Junpei Yamamoto, Suguru Sassa
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device includes the steps of: forming an etching layer (17) formed of silicon on a semiconductor substrate (10); forming a mask layer (20) with a pattern on the etching layer (17), which includes an intermediate layer (22) as a silicon oxide film and a top layer (24) as a polysilicon; and etching the etching layer (17) using the mask layer (20) as a mask, and eliminating the top layer (24).
Claims12
A method for manufacturing a semiconductor device comprising the steps of:
- forming an etching layer formed of silicon on a semiconductor substrate;
- forming a mask layer with a pattern on the etching layer, the mask layer including an intermediate layer formed of a silicon oxide film and a top layer formed of silicon, wherein the step of forming the mask layer includes the steps of:
- layering the intermediate layer and the top layer on the etching layer;
- patterning the intermediate layer and the top layer;
- forming a cover layer formed of a silicon oxide film on the patterned intermediate layer and the top layer;
- and
- forming side wall layers on side surfaces of the patterned intermediate layer and the patterned top layer by etching an entire surface of the cover layer to expose the top layer;
- and
- etching the etching layer using the mask layer as a mask, and eliminating the top layer, the etching layer etched to form a plurality of word lines.
6 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming an etching layer;
- forming a mask layer with a pattern on the etching layer, the mask layer including an intermediate layer and a top layer formed of the same element as that used for forming the etching layer, wherein the step of forming the mask layer includes the steps of:
- layering the intermediate layer and the top layer on the etching layer;
- patterning the intermediate layer and the top layer;
- forming a cover layer formed of a silicon oxide film on the patterned intermediate layer and the top layer;
- and
- forming side wall layers on side surfaces of the patterned intermediate layer and the patterned top layer by etching an entire surface of the cover layer to expose the top layer;
- and
- etching the etching layer using the mask layer as a mask, and eliminating the top layer, the etching layer etched to form a plurality of word lines.
6 more elements
Dependencies are inferred from the claim text.