Maskless nanofabrication of electronic components
AssigneeThe Regents of the University of California
InventorsConstantine P. Grigoropoulos, Seung-Hwan Ko, Jaewon Chung, Dimos Poulikakos, Heng Pan
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Abstract
The present invention relates to systems, materials and methods for the formation of conducting, semiconducting, and dielectric layers, structures and devices from suspensions of nanoparticles. Drop-on-demand systems are used in some embodiments to fabricate various electronic structures including conductors, capacitors, FETs. Selective laser ablation is used in some embodiments to pattern more precisely the circuit elements and to form small channel devices.
Claims19
A method of forming a nanostructure comprising:
- depositing a suspension containing nanoparticles onto a substrate forming thereby a pattern;
- ablating said pattern to produce an ablated pattern;
- and
- sintering said ablated pattern to produce said nanostructure.
A method of forming at least two nanostructures comprising:
- forming a first nanostructure on a substrate, wherein said first nanostructure is sintered;
- depositing a suspension containing nanoparticles onto said substrate forming a pattern thereon;
- ablating material from said pattern by laser ablation to produce an ablated pattern, wherein the power of said laser is sufficient for laser ablation of said pattern but insufficient for substantial ablation of said first nanostructure;
- and
- sintering said nanoparticles in said ablated pattern to produce a second nanostructure.
A method of forming a capacitor comprising:
- depositing a first suspension to form a bottom electrode of said capacitor;
- depositing a dielectric layer at least partially on said bottom electrode;
- depositing a second suspension containing nanoparticles in a pattern onto said substrate, wherein said second suspension lies partially on said dielectric layer substantially above said bottom electrode;
- and
- sintering said second suspension to form a top electrode of said capacitor, wherein said method further comprises laser ablating to alter the structure of at least one of said bottom electrode, said dielectric layer or said top electrode.
A method of forming an organic field effect transistor comprising:
- forming a source nanostructure and a drain nanostructure on a substrate wherein said forming comprises depositing a suspension of nanoparticles and sintering;
- and, forming an organic semiconducting structure between said source nanostructure and said drain nanostructure;
- and, forming a dielectric layer on said organic semiconducting structure;
- and,
- forming a gate electrode on said dielectric layer wherein said forming comprises depositing a suspension of nanoparticles and sintering.
A method of forming self-aligned channels in an organic field effect transistor comprising:
- forming a source nanostructure and a drain nanostructure on a substrate wherein said forming comprises depositing a suspension of nanoparticles and sintering;
- defining a channel region between said source nanostructure and said drain nanostructure with laser ablation;
- forming an organic semiconducting structure between said source nanostructure and said drain nanostructure;
- forming a dielectric layer on said organic semiconducting structure;
- and
- forming a gate electrode on said dielectric layer wherein said forming comprises depositing a suspension of nanoparticles and sintering.
Dependencies are inferred from the claim text.