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AssigneeInternational Business Machines Corporation
InventorsCyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, Simon Gaudet, Christian Lavoie, Huiling Shang
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A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.
A method of forming a self-aligned contact to a semiconductor device comprising:
A method of forming a self-aligned contact to a semiconductor device comprising:
A method of forming a self-aligned contact to a semiconductor device comprising:
Dependencies are inferred from the claim text.