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US 7,682,967 B2Granted
Method of forming metal wire in semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsEun Soo Kim, Jung Geun Kim, Suk Joong Kim
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Abstract
A method of forming a metal wire in a semiconductor device is disclosed The method includes the steps of etching an insulating layer formed on a semiconductor substrate to form a dual damascene pattern, forming a barrier metal layer in the dual damascene pattern, forming a metal layer on the barrier metal layer, and filling the dual damascene pattern with a conductive material to form a metal wire.
Claims20
A method of forming a metal wire in a semiconductor device, comprising the steps of:
- etching an insulating layer formed on a semiconductor substrate to form a dual damascene pattern;
- forming a barrier metal layer in the dual damascene pattern;
- forming a metal layer on the barrier metal layer;
- performing a heat treatment process, thereby causing the metal layer to migrate into a lower region of the dual damascene pattern;
- and
- filling the dual damascene pattern with a conductive material to form a metal wire.
3 more elements
A method of forming a metal wire in a semiconductor device, comprising the steps of:
- etching a first insulating layer formed on a semiconductor substrate to form a first trench;
- filling the first trench with a first metal layer to form a first metal wire;
- forming a first etching stop layer, a second insulating layer, a second etching stop layer, and a third insulating layer on the semiconductor substrate including the first metal layer;
- etching the third insulating layer, the second etching stop layer, the second insulating layer, and the first etching stop layer to form a dual damascene structure comprising a second trench and a via hole;
- forming a second metal layer on a region of the second trench;
- performing a heat treatment process, thereby causing the second metal layer to migrate into lower regions and along side surfaces of the second trench and the via hole;
- and,
- filling the second trench and the via hole with a third metal layer to form a second metal wire.
5 more elements
Dependencies are inferred from the claim text.