Methods of forming solder connections and structure thereof
AssigneeInternational Business Machines Corporation
InventorsTimothy H. Daubenspeck, Jeffrey P. Gambino, Christopher D. Muzzy, Wolfgang Sauter
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AssigneeInternational Business Machines Corporation
InventorsTimothy H. Daubenspeck, Jeffrey P. Gambino, Christopher D. Muzzy, Wolfgang Sauter
Estimating the term…
In a first aspect, a method comprises depositing a first metal containing layer into a trench structure, which contacts a metalized area of a semiconductor structure. The method further includes patterning at least one opening in a resist to the first metal containing layer. The opening should be in alignment with the trench structure. At least a pad metal containing layer is formed within the at least one opening (preferably by electroplating processes). The resist and the first metal layer underlying the resist are then etched (with the second metal layer acting as a mask, in embodiments). The method includes flowing solder material within the trench and on pad metal containing layer after the etching process. The structure is a controlled collapse chip connection (C4) structure comprising at least one electroplated metal layer formed in a resist pattern to form at least one ball limiting metallurgical layer. The structure further includes an underlying metal layer devoid of undercuts.
A method comprising:
A method for reducing corrosion of under bump metallization material during formation of a solder bump on a semiconductor structure comprising:
A method for controlling dimensions of a solder bump during formation of the solder bump comprising:
A method comprising:
Dependencies are inferred from the claim text.