Method of forming solder bump on high topography plated Cu

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming an input/output (I/O) pad over the substrate;
• forming a first insulating layer over the substrate and I/O pad;
• forming a redistribution layer over the I/O pad and first insulating layer;
• forming a second insulating layer over the first insulating layer, I/O pad, and redistribution layer;
• removing a portion of the second insulating layer to expose the redistribution layer and form a sidewall of the second insulating layer between a surface of the second insulating material and a surface of the redistribution layer;
• forming a protective layer over the second insulating layer and redistribution layer, the protective layer following a contour of the surface and sidewall of the second insulating layer and surface of the redistribution layer;
• removing a portion of the protective layer to expose a portion of the surface of redistribution layer;
• forming a bump over the surface of the redistribution layer and a portion of the protective layer adjacent to the sidewall of the second insulating layer, wherein the protective layer over the sidewall of the second insulating layer protects the second insulating layer;
• and
• removing the protective layer over the surface of the second insulating layer.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a first insulating layer over the substrate and first conductive layer;
• forming a second conductive layer over the first conductive layer and first insulating layer;
• forming a second insulating layer over the first insulating layer and second conductive layer;
• removing a portion of the second insulating layer to expose the second conductive layer and form a sidewall of the second insulating layer between a surface of the second insulating material and a surface of the second conductive layer;
• forming a protective layer over the surface of the second conductive layer and surface and sidewall of the second insulating layer;
• removing a portion of the protective layer to expose a portion of the surface of the second conductive layer;
• and
• forming a bump over the surface of the second conductive layer and a portion of the protective layer adjacent to the sidewall of the second insulating layer, wherein the protective layer over the sidewall of the second insulating layer protects the second insulating layer.