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US 7,682,954 B2Granted
Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method
AssigneePanasonic Corporation
InventorsYuichiro Sasaki, Ichiro Nakayama, Bunji Mizuno
Life of this patent
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Abstract
An impurity region having a box-shaped impurity profile is formed. An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.
Claims10
An impurity introducing method which comprising:
- a step of introducing an impurity selected from a group consisting of B, As, P, Sb and In into a surface of a semiconductor substrate;
- and
- a step of radiating inactive He plasma to the surface of the semiconductor substrate after the impurity is introduced in the impurity introducing step, wherein the inactive He plasma is radiated while the semiconductor substrate is cooled.
An impurity introducing method comprising:
- a step of introducing an impurity selected from a group consisting of B, As, P, Sb and In into a surface of a semiconductor substrate;
- and
- a step of radiating inactive He plasma to the surface of the semiconductor substrate after the impurity introducing step such that the impurity concentration at a depth position of 4 nm is set to be 1/10 or more of the impurity concentration on the surface of the semiconductor substrate, wherein the inactive He plasma is radiated while the semiconductor substrate is cooled.
An impurity introducing method comprising:
- a step of introducing an impurity selected from a group consisting of B, As, P, Sb and In into a surface of a semiconductor substrate;
- and
- a step of radiating inactive He plasma to the surface of the semiconductor substrate after the impurity is introduced in the impurity introducing step, wherein the inactive He plasma knocks the impurity introduced in the surface, wherein the inactive He plasma is radiated while the semiconductor substrate is cooled.
Dependencies are inferred from the claim text.