Laser treatment device, laser treatment method, and semiconductor device fabrication method

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous semiconductor film over a substrate;
• scanning a first region of the amorphous semiconductor film with a laser beam in a first direction to crystallize the first region;
• changing a minor axis direction of the laser beam by using an optical system after scanning the first region;
• scanning a second region of the amorphous semiconductor film with the laser beam in a second direction to crystallize the second region after changing the minor axis direction;
• and
• forming a first thin film transistor using the first region of the semiconductor film and a second thin film transistor using the second region of the semiconductor film,
• wherein a first angle between said first direction and a charge transferring direction of the first thin film transistor and a second angle between said second direction and a charge transferring direction of the second thin film transistor are the different from each other.

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous semiconductor film over a substrate;
• scanning a first region of the amorphous semiconductor film with a laser beam in a first direction to crystallize the first region;
• changing a minor axis direction of the laser beam by using an optical system after scanning the first region;
• scanning a second region of the amorphous semiconductor film with the laser beam in a second direction to crystallize the second region after changing the minor axis direction;
• and
• forming a first thin film transistor using the first region of the semiconductor film and a second thin film transistor using the second region of the semiconductor film,
• wherein a first angle between said first direction and a charge transferring direction of the first thin film transistor and a second angle between said second direction and a charge transferring direction of the second thin film transistor are the same as each other.