Epitaxial semiconductor deposition methods and structures
AssigneeASM America, Inc.
InventorsPaul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
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Abstract
Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
Claims34
A method for depositing an epitaxial germanium-containing layer on a silicon-containing substrate, the method comprising:
- loading the silicon-containing substrate into a deposition chamber;
- holding the silicon-containing substrate in the deposition chamber during a first time period while preparing the silicon-containing substrate for deposition;
- protecting the silicon-containing substrate from contamination during the first time period by flowing a surface active compound over the silicon-containing substrate, wherein the surface active compound is selected from the group consisting of a silicon compound and a germanium compound;
- and
- depositing an epitaxial germanium-containing layer over the silicon-containing substrate during a second time period that is subsequent to the first time period, wherein the epitaxial germanium-containing layer is deposited using a precursor or precursor mixture that is different from the surface active compound.
A method comprising:
- heating a single crystal silicon structure to a first temperature;
- changing the temperature of the single crystal silicon structure from the first temperature to a second temperature during a temperature change time period that terminates when the second temperature is reached;
- stabilizing the temperature of the single crystal silicon structure at the second temperature after the temperature change time period;
- contacting the single crystal silicon structure with a surface active compound during at least a portion of the temperature change time period;
- and
- depositing an epitaxial germanium-containing layer over the single crystal silicon structure while stabilized at the second temperature, wherein the epitaxial germanium-containing layer is deposited using a precursor or precursor mixture that is different from the surface active compound.
Dependencies are inferred from the claim text.