Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement
AssigneeAdvanced Laser Separation International B.V.
InventorsRogier Evertsen, Hans Peter Chall
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Abstract
A method and arrangement for treating a substrate processed using a laser beam, wherein said substrate comprises at least a body of semiconductor material. The method comprises a step of etching said substrate for removing from said body of semiconductor material recast material deposited on said body during said laser processing. The step of etching is controlled for removing in addition to said recast layer, at least a part of said semiconductor material of said body for improving mechanical strength of said substrate.
Claims24
A method of treating a substrate comprising a body of semiconductor material processed with a laser beam, comprising:
- removing from the semiconductor material recast material deposited on said substrate during said laser processing, and at least a part of said body of semiconductor material contiguous to an area processed with a laser beam;
- wherein
- the removing of said recast material and said part of said contiguous body of semiconductor material comprises an etching,
- the etching is controlled to remove both the recast material and a depth of said contiguous semiconductor material, and
- said etching control is optimally performed to a depth of the contiguous semiconductor material to remove microcracks formed due to laser processing, resulting in an improvement of mechanical strength of said substrate.
Dependencies are inferred from the claim text.