Method for fabricating a hybrid orientation substrate

A method for fabricating a hybrid orientation substrate comprising steps of:

• providing a direct silicon bonding (DSB) wafer having a first substrate with a first crystalline orientation and a second substrate with a second crystalline orientation directly bonded thereon;
• performing a first amorphization process to partially transform the second substrate into a first amorphized region;
• forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking layer and a second region covered by the first blocking layer;
• performing a second amorphization process to transform the first region into an second amorphized region;
• and
• performing an annealing process to recrystallize the first amorphized region into the orientation of the second substrate and the second amorphized region into the orientation of the first substrate.