US 7,682,931 B2 · Method for manufacturing semiconductor device

Abstract

When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified.

Claims26

Dependent claims

A method for manufacturing a semiconductor device comprising:

selectively etching a single crystal semiconductor substrate to form a groove in the single crystal semiconductor substrate;
irradiating the single crystal semiconductor substrate with at least one of hydrogen and rare gas ions to form a plurality of separation layers formed at a certain depth from a surface of the single crystal semiconductor substrate, thereby, forming a plurality of first single crystal semiconductor layers over the plurality of separation layers;
bonding a substrate having an insulating surface and the single crystal semiconductor substrate with each other;
separating the plurality of first single crystal semiconductor layers from the single crystal semiconductor substrate so as to leave the plurality of first single crystal semiconductor layers over the insulating surface of the substrate;
and
selectively etching the plurality of first single crystal semiconductor layers to form a plurality of second single crystal semiconductor layers.

3 more elements

A method for manufacturing a semiconductor device comprising:

forming a silicon oxide film and a silicon nitride film over a single crystal semiconductor substrate;
selectively etching the silicon oxide film and the silicon nitride film to form a silicon oxide layer and a silicon nitride layer;
selectively etching the single crystal semiconductor substrate using the silicon nitride layer as a mask to form a groove in the single crystal semiconductor substrate;
irradiating the single crystal semiconductor substrate with at least one of hydrogen and rare gas ions to form a plurality of separation layers formed at a certain depth from a surface of the single semiconductor substrate, thereby, forming each of a plurality of first single crystal semiconductor layers over each of the plurality of separation layers;
bonding a substrate having an insulating surface and the single crystal semiconductor substrate with each other;
separating the plurality of first single crystal semiconductor layers from the single crystal semiconductor substrate so as to leave the plurality of first single crystal semiconductor layers over the insulating surface of the substrate;
and
selectively etching the plurality of first single crystal semiconductor layers to form a plurality of second single crystal semiconductor layers.

5 more elements

Dependencies are inferred from the claim text.

Method for manufacturing semiconductor device

Life of this patent

Method for manufacturing semiconductor device

Life of this patent

Abstract

Claims26